Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount  

Surface Mount

Mounting Type  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

230W Tc

Current - Continuous Drain (Id) @ 25℃  

97A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Turn Off Delay Time  

43 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 150μA

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

Series  

HEXFET®

Published  

2008

JESD-609 Code  

e3

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Termination  

SMD/SMT

ECCN Code  

EAR99

Resistance  

9MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

230W

Case Connection  

DRAIN

Turn On Delay Time  

16 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

9m Ω @ 58A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4820pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

120nC @ 10V

Rise Time  

52ns

Vgs (Max)  

±20V

Fall Time (Typ)  

57 ns

Continuous Drain Current (ID)  

97A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

100V

Dual Supply Voltage  

100V

Avalanche Energy Rating (Eas)  

242 mJ

Recovery Time  

57 ns

Nominal Vgs  

4 V

Height  

4.826mm

Length  

10.668mm

Width  

9.65mm

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free